K06N60 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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K06N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

12A

10A

8A

6A

150°C

100°C

4A

25°C

2A

-55°C

0A

0.0V

0.5V

1.0V

1.5V

2.0V

VF, FORWARD VOLTAGE

Figure 24. Typical diode forward current as

a function of forward voltage

SKP06N60

SKA06N60

2.0V

1.5V

I F = 12A

IF = 6A

1.0V

-40°C 0°C 40°C 80°C 120°C

Tj, JUNCTION TEMPERATURE

Figure 25. Typical diode forward voltage as

a function of junction temperature

D=0.5

100K/W 0.2

0.1

0.05

0.02

10-1K/W

0.01

SKP06N60

R,(K/W)

0.523

0.550

0.835

1.592

R1

τ, (s)

7.25*10-2

6.44*10-3

7.13*10-4

7.16*10-5

R2

single pulse

C1=τ1/R1 C2=τ2/R2

10-2K/W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 26. Diode transient thermal

impedance as a function of pulse width

(D = tp / T)

101K/W

D=0.5

0.2

100K/W

0.1

0.05

0.02

10-1K/W

0.01

SKA06N60

R,(K/W)

2.852

0.654

0.665

0.828

R1

τ, (s)

1.887

4.64*10-2

2.88*10-3

3.83*10-4

R2

single pulse

C1=τ1/R1 C2=τ2/R2

10-2K/W

10µs 100µs 1ms 10ms 100ms 1s 10s

tp, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse width

(D = tp / T)

10

Rev. 2.3 Sep 07

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