S8050 View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

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S8050

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

Unisonic Technologies 

S8050

 TYPICAL CHARACTERISTICS

Static Characteristics

0.5

IB=3.0mA

0.4

IB=2.5mA

IB=2.0mA

0.3

IB=1.5mA

0.2

IB=1.0mA

0.1

IB=0.5mA

0 0 0.4 0.8 1.2 1.6 2.0

Collector-Emitter Voltage, VCE ( V)

Base-Emitter on Voltage

102

VCE=1V

101

100

10-10

0.2 0.4 0.6 0.8 1.0

Base-Emitter Voltage, VBE (V)

Current Gain-Bandwidth Product

103

VCE=10V

102

101

101000

101

102

103

Collector Current, Ic (mA)

NPN SILICON TRANSISTOR

DC Current Gain

103

VCE=1V

102

101

10100-1

100

101

102

103

Collector Current, Ic (mA)

Saturation Voltage

104

Ic=10*IB

103

VBE(SAT)

102

VCE(SAT)

101

10-1

100

101

102

103

Collector Current, Ic (mA)

Collector Output Capacitance

103

f=1MHz

102

IE=0

101

101000

101

102

103

Collector-Base Voltage (V)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 4

QW-R201-013.D

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