HRF3205S View Datasheet(PDF) - Intersil
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Description
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HRF3205S Datasheet PDF : 9 Pages
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HRF3205, HRF3205S
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulsed Source to Drain Current (Note 2)
SYMBOL
TEST CONDITIONS
ISD
MOSFET
Symbol Showing
D
ISDM
The Integral
Reverse P-N
Junction Diode
G
MIN
TYP
MAX UNITS
-
-
100
A
(Note 1
-
-
390
A
S
Source to Drain Diode Voltage
VSD
ISD = 59A (Note 4)
-
-
1.3
V
Reverse Recovery Time
trr
ISD = 59A, dISD/dt = 100A/µs (Note 4)
-
110
170
ns
Reverse Recovered Charge
QRR
ISD = 59A, dISD/dt = 100A/µs (Note 4)
-
450
680
nC
NOTE:
2. Repetitive rating; pulse width limited by maximum junction temperature (See Figure 11)
Typical Performance Curves
1000
100
VGS IN DECENDING ORDER
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
100
VGS IN DECENDING ORDER
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
0.1
20µs PULSE WIDTH
TC = 25oC
1.0
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 1. OUTPUT CHARACTERISTICS
1000
TJ = 25oC
100
TJ = 175oC
10
VDS = 25V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
3
4.5
6
7.5
9
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 3. TRANSFER CHARACTERISTICS
10
0.1
20µs PULSE WIDTH
TC = 175oC
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 2. OUTPUT CHARACTERISTICS
2.5
ID = 98A, VGS = 10V
PULSE DURATION = 80µs
2.0 DUTY CYCLE = 0.5% MAX
1.5
1.0
0.5
0
-80 -40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 4. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HRF3205, HRF3205S Rev. B
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