PZT2222A View Datasheet(PDF) - Secos Corporation.

Part Name

Description

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PZT2222A

NPN Silicon General Purpose Transistor

Secos Corporation. 

Elektronische Bauelemente

PZT2222A

NPN Silicon

General Purpose Transistor

1.0

TJ = 25°C

0.8

VBE(sat) @ IC/IB = 10

0.6

VBE(on) @ VCE = 10 V

0.4

1.0 V

0.2

VCE(sat) @ IC/IB = 10

0

0.1 0.2 0.5 1.0 2.0

5.0 10 20

50 100 200

IC, COLLECTOR CURRENT (mA)

500 1.0 k

Figure 11. “On” Voltages

+0.5

0

RqVC for VCE(sat)

-ā0.5

-ā1.0

-ā1.5

-ā2.0

RqVB for VBE

-ā2.5

0.1 0.2

0.5 1.0 2.0 5.0 10 20 50 100 200 500

IC, COLLECTOR CURRENT (mA)

Figure 12. Temperature Coefficients

http://www.SeCoSGmbH.com/

01-Jun-2002 Rev. A

Any changing of specification will not be informed individual

Page 4 of 4

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