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PZT2222A View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
View to exact match
PZT2222A
NXP
NXP Semiconductors. NXP
PZT2222A Datasheet PDF : 0 Pages
NXP Semiconductors
NPN switching transistor
Product data sheet
PZT2222A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
109
K/W
28
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tamb = 125 °C
IC = 0; VEB = 5 V
IC = 0.1 mA; VCE = 10 V
35
IC = 1 mA; VCE = 10 V
50
IC = 10 mA; VCE = 10 V
75
IC = 10 mA; VCE = 10 V;
35
Tamb = 55 °C
IC = 150 mA; VCE = 1 V; note 1
50
IC = 150 mA; VCE = 10 V; note 1
100
IC = 500 mA; VCE = 10 V; note 1
40
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 150 mA; IB = 15 mA
0.6
IC = 500 mA; IB = 50 mA
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz
IC = 20 mA; VCE = 20 V; f = 100 MHz 300
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 150 mA; IBon = 15 mA;
IBoff = 15 mA; Tamb = 25 °C
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
MAX.
10
10
10
300
300
1
1.2
2
8
25
35
10
25
250
200
60
UNIT
nA
µA
nA
mV
V
V
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns
1999 Apr 14
3
 

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