P2804NVG View Datasheet(PDF) - Unspecified

Part Name

Description

View to exact match

P2804NVG

N- & P-Channel Enhancement Mode Field Effect Transistor

Unspecified 

NIKO-SEM

N- & P-Channel Enhancement Mode

Field Effect Transistor

P2804NVG

SOP-8

Lead-Free

PRODUCT SUMMARY

V(BR)DSS RDS(ON)

ID

N-Channel 40 28mΩ 7A

P-Channel -40 65mΩ -5A

G : GATE

D : DRAIN

S : SOURCE

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current1

TC = 25 °C

TC = 70 °C

Power Dissipation

TC = 25 °C

TC = 70 °C

Junction & Storage Temperature Range

Lead Temperature (1/16” from case for 10 sec.)

VDS

VGS

ID

IDM

PD

Tj, Tstg

TL

N-Channel P-Channel UNITS

40

-40

V

±20

±20

V

7

-6

6

-5

A

20

-20

2

W

1.3

-55 to 150

°C

275

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

Junction-to-Ambient

RθJA

1Pulse width limited by maximum junction temperature.

2Duty cycle ≤ 1%

TYPICAL

MAXIMUM

62.5

UNITS

°C / W

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V(BR)DSS

VGS(th)

STATIC

VGS = 0V, ID = 250µA

VGS = 0V, ID = -250µA

VDS = VGS, ID = 250µA

VDS = VGS, ID = -250µA

LIMITS

UNIT

MIN TYP MAX

N-Ch 40

P-Ch -40

V

N-Ch 1.0 1.5 2.5

P-Ch -1.0 -1.5 -2.5

1

AUG-19-2004

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