OP484ES-REEL View Datasheet(PDF) - Analog Devices
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Description
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OP484ES-REEL Datasheet PDF : 24 Pages
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OP184/OP284/OP484
@ VS = ±15.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Symbol Conditions
Min
INPUT CHARACTERISTICS
Offset Voltage, OP184/OP284E Grade1 VOS
Offset Voltage, OP184/OP284F Grade1 VOS
−40°C ≤ TA ≤ +125°C
Offset Voltage, OP484E Grade1
−40°C ≤ TA ≤ +125°C
VOS
Offset Voltage, OP484F Grade1
−40°C ≤ TA ≤ +125°C
VOS
−40°C ≤ TA ≤ +125°C
Input Bias Current
IB
−40°C ≤ TA ≤ +125°C
Input Offset Current
IOS
−40°C ≤ TA ≤ +125°C
Input Voltage Range
−15
Common-Mode Rejection Ratio
CMRR
VCM = −14.0 V to +14.0 V, −40°C ≤ TA ≤ +125°C 86
VCM = −15.0 V to +15.0 V
80
Large Signal Voltage Gain
AVO
RL = 2 kΩ, −10 V ≤ VO ≤ 10 V
150
RL = 2 kΩ, −40 V ≤ TA ≤ +125°C
75
Offset Voltage Drift E Grade
ΔVOS/ΔT
Bias Current Drift
ΔVB/B ΔT
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 1.0 mA
14.8
Output Voltage Low
VOL
IL = 1.0 mA
Output Current
IOUT
±10
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = ±2.0 V to ±18 V, −40°C ≤ TA ≤ +125°C
90
Supply Current/Amplifier
ISY
VO = 0 V, −40°C ≤ TA ≤ +125°C
Supply Current/Amplifier
ISY
VS = ±18 V, −40°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 kΩ
2.4
Full-Power Bandwidth
BWp
1% distortion, RL = 2 kΩ, VO = 29 V p-p
Settling Time
tS
To 0.01%, 10 V step
Gain Bandwidth Product
GBP
Phase Margin
Øo
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
Voltage Noise Density
en
f = 1 kHz
Current Noise Density
in
Typ Max
Unit
100
200
175
375
150
300
250
500
80 450
575
50
+15
90
1000
0.2 2.00
150
μV
μV
μV
μV
μV
μV
μV
μV
nA
nA
nA
V
dB
dB
V/mV
V/mV
μV/°C
pA/°C
V
−14.875 V
mA
dB
2.0
mA
2.25
mA
4.0
V/μs
35
kHz
4
μs
4.25
MHz
50
Degrees
0.3
μV p-p
3.9
nV/√Hz
0.4
pA/√Hz
1 Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
Rev. D | Page 5 of 24
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