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NE5512D View Datasheet(PDF) - Philips Electronics

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NE5512D Datasheet PDF : 4 Pages
1 2 3 4
Philips Semiconductors Linear Products
Dual high-performance operational amplifier
Product specification
NE/SA/SE5512
ELECTRICAL PERFORMANCE CHARACTERISTICS
VCC = ±15V, TA = 25°C over temperature range, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
VOS
Input offset voltage
RS=100
TA=+25°C
Over temp.
VOS/T
IOS
Input offset current
RS=100k
TA=+25°C
Over temp.
IOS/T
IBIAS
Input bias current
RS=100k
TA=+25°C
Over temp.
IBIAS/T
RIN
Input resistance differential
VCM
Input common mode range
TA=+25°C
TA=+25°C
Over temp.
CMRR
Input common-mode rejection
ratio
VCC=±15V
VIN=±13.5V
TA=+25°C
VIN=±13V
Over temp.
AV
SR
GBW
Large-signal voltage gain
Slew rate
Small-signal unity gain band-
width
RL=2kTA=25°C
VO=±10V over temp.
TA=25°C
TA=25°C
θM
VOUT
Phase margin
Output voltage swing
VOUT
Output voltage swing
TA=25°C
RL=2k
TA=25°C
Over temp.
RL=6001
TA=25°C
Over temp.
ICC
Power supply current
RL=Open
TA=25°C
Over temp.
PSRR
Power supply rejection ratio
Over temp.
AA
Amplifier-to-amplifier coupling
THD
Total harmonic distortion
VNOISE
INOISE
ISC
Input noise voltage
Input noise current
Short-circuit current
f=1kHz to 20kHz,
TA=25°C
f=10kHz
TA=25°C
VO=7VRMS
f=1kHz
TA=25°C
f=1kHz
TA=25°C
±15V, TA=25°C
NOTES:
1. Not to exceed maximum package power dissipation.
SE5512
Min Typ Max
NE/SA5512
Min Typ Max
UNIT
0.7
2
1
3
4
1
5
mV
1.5
6
5
µV/°C
3
10
4
20
30
6
20
nA
8
30
40
pA/°C
3
10
4
20
6
20
8
30
30
40
100
100
±13.5 ±13.7
±13 ±13.2
±13.5 ±13.7
±13 ±13.2
nA
pA/°C
M
V
70 100
70 100
dB
50
25
200
0.6
1
3
45
50
25
200
1
3
45
V/mV
V/µs
MHz
degree
±13 ±13.5
±13 ±13.5
V
±12.5 ±13
±12.5 ±13
±10 ±11.5
±10 ±11.5
V
±7.5 ±9
±8
±9
3.4
5
3.6 5.5
3.4
5
mA
3.6 5.5
80 100
80 100
dB
-120
-120
dB
0.01
0.01
%
30
30
nV/Hz
0.2
0.2
pA/Hz
40
40
mA
August 31, 1994
80
 

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