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MMBTA70LT1 View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
MMBTA70LT1
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMBTA70LT1 Datasheet PDF : 0 Pages
ON Semiconductort
General Purpose Transistor
PNP Silicon
MMBTA70LT1
MAXIMUM RATINGS
Rating
Symbol
Value
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCEO
VEBO
IC
–40
–4.0
–100
MMBTA70LT1 = M2C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RθJA
556
PD
300
2.4
Thermal Resistance, Junction to Ambient
RθJA
417
Junction and Storage Temperature
TJ, Tstg –55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
Emitter–Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = –5.0 mAdc, VCE = –10 Vdc)
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)EBO
ICBO
hFE
VCE(sat)
fT
Cobo
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AF)
COLLECTOR
3
1
BASE
2
EMITTER
Min
Max
Unit
–40
–4.0
–100
Vdc
Vdc
nAdc
40
400
–0.25
Vdc
125
4.0
MHz
pF
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 1
Publication Order Number:
MMBTA70LT1/D
 

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