MMBD353LT1 View Datasheet(PDF) - Motorola => Freescale
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MMBD353LT1 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable
also for use in detector and ultra–fast switching circuits.
• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
• Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
THERMAL CHARACTERISTICS
VR
7.0
VCC
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
PD
TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symb Min Max Unit
ol
OFF CHARACTERISTICS
Forward Voltage
(IF = 10 mAdc)
Reverse Voltage Leakage Current
(VR = 3.0 V)
(VR = 7.0 V)
Capacitance
(VR = 0 V, f = 1.0 MHz)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
VF
— 0.60 V
IR
mA
— 0.25
— 10
C
— 1.0 pF
Order this document
by MMBD352LT1/D
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
3
1
2
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MMBD352LT1
CASE 318 – 08, STYLE 11
SOT– 23 (TO – 236AB)
1
CATHODE 3
CATHODE/ANODE
2
ANODE
MMBD353LT1
CASE 318 – 08, STYLE 19
SOT– 23 (TO – 236AB)
3
CATHODE
ANODE
1
2
ANODE
MMBD354LT1
CASE 318 – 08, STYLE 9
SOT– 23 (TO – 236AB)
ANODE
3
CATHODE
1
2
CATHODE
MMBD355LT1
CASE 318 – 08, STYLE 12
SOT– 23 (TO – 236AB)
Thermal Clad is a trademark of the Bergquist Company
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1997
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