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MJ15015 View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
MJ15015 Complementary silicon high power transistor ON-Semiconductor
ON Semiconductor ON-Semiconductor
MJ15015 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2N3055A MJ15015 MJ2955A MJ15016
10
7
5
3
2
ts
0.1
tf
0.7
0.5
VCC = 30
IC/IB = 10
0.3
IB1 = IB2
0.2
TJ = 25°C
0.1
0.2 0.3 0.5 0.7 1
23 5
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Turn–Off Times
7 10 15
400
200
Cib
100
TJ = 25°C
2N3055A
MJ15015
MJ2955A
MJ15016
50
30
20
1.0 2.0
Cob
5.0 10 20
50 100 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
500 1000
10,000
1000
VCE = 30 V
NPN
COLLECTOR CUT–OFF REGION
1000
VCE = 30 V
100
PNP
100
TJ = 150°C
10
100°C
1.0
0.1 REVERSE
IC = ICES
FORWARD
25°C
0.01
+ 0.2 + 0.1
0
– 0.1 – 0.2 – 0.3 – 0.4 – 0.5
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 10. 2N3055A, MJ15015
10 TJ = 150°C
1.0
100°C
0.1
REVERSE
0.01
25°C
IC = ICES
FORWARD
0.001
– 0.2 – 0.1
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 11. MJ2955A, MJ15016
20
30 µs
10
100 µs
1 ms
5
BONDING WIRE LIMIT
2
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
100 ms
dc
1
10
20
60
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 12. Forward Bias Safe Operating Area
2N3055A, MJ2955A
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe Operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
20
0.1 ms
10
5.0
1.0 ms
2.0
1.0
0.5
0.2
15
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
100 ms
dc
20
30
60
100 120
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
tion than the curves indicate.
The data of Figures 12 and 13 is based on TC = 25_C;
TJ(pk) is variable depending on power level. Second break-
down pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.
4
Motorola Bipolar Power Transistor Device Data
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