MJ2955 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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MJ2955

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

MJ2955

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0

VCER(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; RBE= 100Ω

-60

V

-70

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB=B -0.4A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A

VBE(on) Base-Emitter On Voltage

IC= -4A ; VCE= -4V

ICEO

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= -30V; IB=B 0

VCE= -100V; VBE(off)= -1.5V

VCE= -100V; VBE(off)= -1.5V,TC= 150℃

VEB= -7.0V; IC=0

-1.1

V

-3.0

V

-1.5

V

-0.7 mA

-1.0

-5.0

mA

-5.0 mA

hFE-1

DC Current Gain

IC= -4A ; VCE= -4V

20

70

hFE-2

Is/b

fT

DC Current Gain

Second Breakdown Collector

Current with Base Forward Biased

Current Gain-Bandwidth Product

IC= -10A ; VCE= -4V

VCE= -40V,t= 1.0s,Nonrepetitive

IC= -0.5A ; VCE= -10V;ftest= 1.0MHz

5.0

-2.87

2.5

A

MHz

isc Website：www.iscsemi.cn

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