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MJ1000 View Datasheet(PDF) - Motorola => Freescale

Part Name
Description
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MJ1000 Datasheet PDF : 4 Pages
1 2 3 4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJ1000 MJ1001
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Emitter Leakage Current
(VCB = 60 Vdc, RBE = 1.0k ohm)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 80 Vdc, RBE = 1.0k ohm)
(VCB = 60 Vdc, RBE = 1.0k ohm, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 80 Vdc, RBE = 1.0k ohm, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 40 Vdc, IB = 0)
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DCCurrentGain(1) (IC=3.0Adc,VCE=3.0Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Emitter Saturation Voltage(1) (IC = 30 Adc, IB = 12 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 8.0 Adc, IB = 40 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Emitter Voltage(1) (IC = 3.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v v (1)Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Symbol
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
MJ1000
MJ1001
V(BR)CEO
ICER
IEBO
ICEO
hFE
VCE(sat)
VBE(on)
Min
60
80
1000
750
Max
Unit
Vdc
mAdc
1.0
1.0
5.0
5.0
2.0
mAdc
500
µAdc
500
2.0
Vdc
4.0
2.5
Vdc
50,000
3000
2000
20,000
10,000
5000
2000
1000
500
200
100
TJ = 150°C
25°C
– 55°C
VCE = 3.0 V
1000
TC = 25°C
500
300
200
VCE = 3.0 Vdc
IC = 3.0 Adc
100
50
50
0.01
0.05 0.1 0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
5.0 10
30103
104
105
106
f, FREQUENCY (Hz)
Figure 3. Small–Signal Current Gain
3.5
3.0
TJ = 25°C
10
7.0
TJ = 200°C
5.0
2.5
2.0
VBE(sat) @ IC/IB = 250
1.5
1.0
VBE @ VCE = 3.0 V
0.5
VCE(sat) @ IC/IB = 250
3.0
2.0
SECONDARY BREAKDOWN
1.0
LIMITATION
0.7
THERMAL LIMITATION @ TC = 25°C
0.5
BONDING WIRE LIMITATION
0.3
MJ1000
0.2
MJ1001
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
0.1
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
There we two limitations on the power handling ability of a
transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tion; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
2
Motorola Bipolar Power Transistor Device Data
 

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