MJ10005 View Datasheet(PDF) - ON Semiconductor
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MJ10005 Datasheet PDF : 8 Pages
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MJ10005
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted).
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Min
Typ
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Sustaining Voltage (Table 1)
(IC = 250 mA, IB = 0, Vclamp = Rated VCEO)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Emitter Sustaining Voltage (Table 1, Figure 12)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 2.0 A, Vclamp = Rated VCEX, TC = 100_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 10 A, Vclamp = Rated VCEX, TC = 100_C)
VCEO(sus)
400
—
—
VCEX(sus)
450
—
—
325
—
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEV
—
—
0.25
—
—
5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VEB = 2.0 Vdc, IC = 0)
ICER
IEBO
—
—
5.0
—
—
175
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Second Breakdown Collector Current with base forward biased
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 10 Adc, VCE = 5.0 Vdc)
IS/b
See Figure 11
hFE
50
—
600
40
—
400
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 10 Adc, IB = 400 mAdc)
(IC = 20 Adc, IB = 2.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 10 Adc, IB = 400 mAdc, TC = 100_C)
VCE(sat)
—
—
—
—
1.9
—
3.0
—
2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 10 Adc, IB = 400 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 10 Adc, IB = 400 mAdc, TC = 100_C)
VBE(sat)
—
—
—
2.5
—
2.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Diode Forward Voltage (1)
(IF = 10 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small–Signal Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Vf
—
3.0
5.0
hfe
10
—
—
Cob
100
—
325
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Delay Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rise Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Storage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Fall Time
(VCC = 250 Vdc, IC = 10 A,
IB1 = 400 mA, VBE(off) = 5.0 Vdc, tp = 50 µs,
Duty Cycle v 2%).
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Inductive Load Clamped (Table 1)
td
—
0.12
0.2
tr
—
0.2
0.6
ts
—
0.6
1.5
tf
—
0.15
0.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Storage Time
(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA,
tsv
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Crossover Time
VBE(off) = 5.0 Vdc, TC = 100_C)
tc
—
1.0
2.5
—
0.4
1.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Storage Time
(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA,
tsv
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Crossover Time
VBE(off) = 5.0 Vdc, TC = 25_C)
tc
—
0.65
—
—
0.2
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
Unit
Vdc
Vdc
mAdc
mAdc
mAdc
—
Vdc
Vdc
Vdc
—
pF
µs
µs
µs
µs
µs
µs
µs
µs
(1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
(2) Pulse Test: PW = 300 µs, Duty Cycle v 2%.
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