M13S64164A View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.

Part Name

Description

View to exact match

M13S64164A

1M x 16 Bit x 4 Banks Double Data Rate SDRAM

[Elite Semiconductor Memory Technology Inc. 

ESMT

Pin Description

(M13S64164A)

Pin Name

A0~A11,

BA0,BA1

Function

Address inputs

- Row address A0~A11

- Column address A0~A7

A10/AP : AUTO Precharge

BA0, BA1 : Bank selects (4 Banks)

DQ0~DQ15 Data-in/Data-out

RAS

CAS

WE

VSS

VDD

LDQS, UDQS

Row address strobe

Column address strobe

Write enable

Ground

Power

Bi-directional Data Strobe. LDQS

corresponds to the data on DQ0~DQ7;

UDQS correspond to the data on

DQ8~DQ15.

M13S64164A

Operation Temperature Condition -40°C~85°C

Pin Name

Function

LDM, UDM

DM is an input mask signal for write

data. LDM corresponds to the data

on DQ0~DQ7; UDM correspond to

the data on DQ8~DQ15.

CLK, CLK

CKE

CS

VDDQ

VSSQ

VREF

Clock input

Clock enable

Chip select

Supply Voltage for GDQ

Ground for DQ

Reference Voltage for SSTL-2

NC

No connection

Elite Semiconductor Memory Technology Inc.

Publication Date : Mar. 2009

Revision : 1.0

3/49

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