PZTM1102 View Datasheet(PDF) - Philips Electronics
Part Name
Description
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PZTM1102 Datasheet PDF : 7 Pages
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Philips Semiconductors
PNP transistor/Schottky-diode module
Product specification
PZTM1102
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Schottky barrier diode
VF
forward voltage
IF = 100 mA; note 1
−
330
mV
IF = 100 mA; Tamb = −55 to +150 °C; note 1 −
400
mV
IF = 1 A; note 1
−
500
mV
IF = 1 A; Tamb = −55 to +150 °C; note 1
−
560
mV
IR
reverse current
VR = 40 V; note 1
−
300
µA
VR = 40 V; Tj = 125 °C;
Tamb = −55 to +150 °C; note 1
−
35(2)
mA
IR
reverse current
VR = 10 V; note 1
−
40
µA
VR = 10 V; Tj = 125 °C;
Tamb = −55 to +150 °C; note 1
−
15(2)
mA
Cj
junction capacitance
VR = 0 V; f = 1 MHz
−
250
pF
Notes
1. Measured under pulsed conditions: tp ≤ 300 µs; δ ≤ 0.01.
2. Limiting value for Tj = 125 °C; Tj = 150 °C with reverse current applied is not allowed as this may cause thermal
runaway leading to thermal destruction of the diode. A peak junction temperature of Tj = 150 °C is only allowed with
forward voltage applied.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-a
thermal resistance from junction to ambient (for the transistor)
note 1
thermal resistance from junction to ambient (for the Schottky diode) note 1
Note
1. Refer to SOT223 standard mounting conditions.
VALUE
100
250
UNIT
K/W
K/W
1996 May 09
4
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