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PZTM1102 View Datasheet(PDF) - Philips Electronics

Part NameDescriptionManufacturer
PZTM1102 PNP transistor/Schottky-diode module Philips
Philips Electronics Philips
PZTM1102 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
PNP transistor/Schottky-diode module
Product specification
PZTM1102
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
NPN transistor
V(BR)CBO
V(BR)CES
V(BR)EBO
ICES
IEBO
VCEsat
VCEsat
VBEsat
VBEsat
Cob
Cib
fT
hFE
hFE
collector-base breakdown open emitter; IC = 10 µA; IE = 0;
40
voltage
Tamb = 55 to +150 °C; note 1
collector-emitter
open base; IC = 1 mA; VBE = 0;
40
breakdown voltage
Tamb = 55 to +150 °C; note 1
emitter-base breakdown open collector; IE = 10 µA; IC = 0;
6
voltage
Tamb = 55 to +150 °C; note 1
collector-emitter cut-off
current
VCE = 20 V; VBE = 0
VCE = 20 V; VBE = 0; Tamb = 55 to +150 °C
emitter-base cut-off current VEB = 6 V; IC = 0
VEB = 6 V; IC = 0; Tamb = 55 to +150 °C
collector-emitter saturation note 1
voltage
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 3.2 mA
collector-emitter saturation Tamb = 55 to +150 °C; note 1
voltage
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 3.2 mA
base-emitter saturation
note 1
voltage
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
base-emitter saturation
Tamb = 55 to +150 °C; note 1
voltage
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
output capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
input capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz
250
DC current gain
VCE = 1 V; note 1
IC = 0.1 mA
40
IC = 1 mA
70
IC = 10 mA
100
IC = 100 mA
30
DC current gain
VCE = 1 V; Tamb = 55 to +150 °C; note 1
IC = 10 mA
60
IC = 100 mA
15
SWITCHING TIMES (see Figs 2 and 3)
td
delay time
VCC = 5 V
3
tr
rise time
IC = 50 mA
13
ts
storage time
Vi = 0 to 5 V
200
tf
fall time
50
MAX. UNIT
V
V
V
100
nA
50
µA
50
nA
10
µA
200 mV
300 mV
250 mV
350 mV
850 mV
950 mV
1.0
V
1.1
V
4.5
pF
10
pF
MHz
300
500
7
ns
23
ns
380
ns
80
ns
1996 May 09
3
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