SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES
ᴌHigh breakdown voltage VCEO 120V, high current 1A.
ᴌLow saturation voltage and good linearity of hFE.
ᴌComplementary to KTB631K.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
ICP
Collector Power
Dissipation
Ta=25ᴱ
Tc=25ᴱ
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
120
120
5
1
2
1.5
8
150
-55ᴕ150
UNIT
V
V
V
A
W
ᴱ
ᴱ
KTD600K
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
12 3
O
P
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.1+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75+_ 0.15
14.0 MIN
2.3+_ 0.1
0.75+_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE(1) Note
hFE(2)
fT
Cob
VCE(sat)
VBE(sat)
Turn-on Time
ton
Switching Time
Turn-off Time
toff
Storage Time
tstg
Note : hFE(1) Classification Y:100ᴕ200, GR:160ᴕ320
TEST CONDITION
VCB=50V, IE=0
VEB=4V, IC=0
IC=10ỌA, IE=0
IC=1mA, IB=0
IE=10ỌA, IC=0
VCE=5V, IC=50mA
VCE=5V, IC=500mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz, IE=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
I B1
IB2
1
1Ω
24Ω
20u sec 100Ω
1uF
1uF
-2V
12V
VCE =12V
IC =10I B1 =-10IB2 =500mA
MIN.
-
-
120
120
5
100
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
130
20
0.15
0.85
MAX.
1
1
-
-
-
320
-
-
-
0.4
1.2
UNIT
ỌA
ỌA
V
V
V
MHz
pF
V
V
-
100
-
-
500
-
nS
-
700
-
1999. 11. 16
Revision No : 2
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