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KTD1302 View Datasheet(PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part Name
Description
View to exact match
KTD1302
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
KTD1302 Datasheet PDF : 1 Pages
1
KTD31 02
TRANSISTOR (NPN)
FEATURES
z Small Flat Package
z Audio Muting Application
z High Emitter-Base Voltage
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
25
20
12
300
500
250
150
-55~+150
Unit
V
V
V
mA
mW
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1) (FOR)
hFE(2)(REV)
VCE(sat)
VBE(sat)
Cob
fT
Test conditions
IC=0.1mA,IE=0
IC=1mA,IB=0
IE=0.1mA,IC=0
VCB=25V,IE=0
VEB=12V,IC=0
VCE=2V, IC=4mA
VCE=2V, IC=4mA
IC=100mA,IB=10mA
IC=100mA,IB=10mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=1mA,
f=100MHz
Min Typ Max
25
20
12
100
100
200
800
20
0.25
1
10
60
Unit
V
V
V
nA
nA
V
V
pF
MHz
1 
JinYu
semiconductor
www.htsemi.com
Date:2011/05
 

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