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KSD5064 View Datasheet(PDF) - Inchange Semiconductor

Part NameDescriptionManufacturer
KSD5064 Silicon NPN Power Transistor Iscsemi
Inchange Semiconductor Iscsemi
KSD5064 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5064
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
2.5
A
ICP
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25
TJ
Junction Temperature
10
A
80
W
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
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