datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

3N249-M4/51(2015) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
3N249-M4/51
(Rev.:2015)
Vishay
Vishay Semiconductors Vishay
3N249-M4/51 Datasheet PDF : 4 Pages
1 2 3 4
www.vishay.com
KBPxxM-M4, 3N2xx-M4
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
~
~
+
Case Style KBPM
+~~−
PRIMARY CHARACTERISTICS
Package
KBPM
IF(AV)
VRRM
IFSM
IR
VF
TJ max.
Diode variations
1.5 A
50 V to 1000 V
60 A
5 μA
1.0 V
150 °C
In-line
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
MECHANICAL DATA
Case: KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M4 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD 22-B102
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
KBP005M KBP01M KBP02M KBP04M KBP06M KBP08M KBP10M
SYMBOL
UNIT
3N246 3N247 3N248 3N249 3N250 3N251 3N252
Maximum repetitive peak reverse voltage (1) VRRM
50
Maximum RMS voltage (1)
VRMS
35
Maximum DC blocking voltage (1)
VDC
50
Maximum average forward output rectified
current at TA = 40 °C
IF(AV)
Peak forward surge current TA = 25 °C
single half sine-wave (1)
TA = 150 °C
IFSM
Rating for fusing (t < 8.3 ms)
I2t
100
200
400
600
800
1000
V
70
140
280
420
560
700
V
100
200
400
600
800
1000
V
1.5
A
60
A
40
10
A2s
Operating junction and storage temperature
range (1)
TJ, TSTG
-55 to +150
°C
Note
(1) JEDEC® registered values
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
KBP005M
3N246
KBP01M
3N247
KBP02M
3N248
KBP04M
3N249
KBP06M
3N250
KBP08M
3N251
KBP10M
3N252
UNIT
Maximum instantaneous
1.0 A
forward voltage drop per
diode (1)
1.57 A
VF
Maximum DC reverse
TJ = 25 °C
current at rated DC blocking
voltage per diode (1)
TJ = 125 °C
IR
1.0
V
1.3
5.0
μA
500
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
15
pF
Note
(1) JEDEC® registered values
Revision: 05-Aug-15
1
Document Number: 89306
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]