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KBL005(2008) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
KBL005
(Rev.:2008)
Vishay
Vishay Semiconductors Vishay
KBL005 Datasheet PDF : 4 Pages
1 2 3 4
KBL005 thru KBL10
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL KBL005 KBL01 KBL02
Typical thermal resistance
RθJA
RθJL
KBL04
19 (1)
2.4 (2)
KBL06
KBL08
KBL10
UNIT
°C/W
Notes:
(1) Thermal resistance from junction to ambient with units mounted on 3.0 x 3.0 x 0.11" thick (7.5 x 7.5 x 0.3 cm) aluminum plate
(2) Thermal resistance from junction to lead with units mounted on P.C.B. at 0.375" (9.5 mm) lead length and 0.5 x 0.5" (12 x 12 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
KBL06-E4/51
6.0
51
BASE QUANTITY
300
DELIVERY MODE
Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
4.0
Heatsink Mounted
3.0" sq. x 0.06" Thickness
(7.5 x 0.15 cm) Copper Plate
3.0
2.0
1.0
P.C.B. Mounting
0.375" (9.5 mm) Lead Length
60 Hz Resistive or Inductive Load
0
0
50
100
150
Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
100
10
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
200
TJ = 150 °C
175
Single Sine-Wave
150
125
100
75
50
25
1
1.0 Cycle
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
10
1
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 88655
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 15-Apr-08
 

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