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J177 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
fabricante
J177
Vishay
Vishay Semiconductors Vishay
J177 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
J/SST174/175/176/177 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
200
100
IDSS
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
18
250
gfs and gos @ VDS = 15 V
VGS = 0 V, f = 1 kHz
160
80
15
200
rDS
120
gfs
60
12
150
gos
80
40
9
100
40
0
0
25
20
rDS @ ID = 1 mA, VGS = 0 V
IDSS @ VDS = 15 V, VGS = 0 V
2
4
6
8
VGS(off) Gate-Source Cutoff Voltage (V)
20
0
10
Output Characteristics
VGS(off) = 3 V
VGS = 0 V
0.5 V
15
10
5
0
0
1.0 V
1.5 V
2.0 V
4
8
12
16
20
VDS Drain-Source Voltage (V)
Output Characteristics
2
1.6
VGS = 0 V
0.5 V
1.5 V
1.0 V
1.2
2.0 V
0.8
0.4
0
0
VGS(off) = 3 V
0.1
0.2
0.3
0.4
0.5
VDS Drain-Source Voltage (V)
www.vishay.com
9-4
6
50
3
0
2
4
0
6
8
10
VGS(off) Gate-Source Cutoff Voltage (V)
On-Resistance vs. Drain Current
250
TA = 25_C
200
VGS(off) = 1.5 V
150
3V
100
5V
50
0
1
10
ID Drain Current (mA)
On-Resistance vs. Temperature
300
ID = 1 mA
rDS changes X 0.7%/_C
240
100
180
VGS(off) = 1.5 V
3V
120
5V
60
0
55 35 15 5 25 45 65 85 105 125
TA Temperature (_C)
Document Number: 70257
S-04030Rev. E, 04-Jun-01
 

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