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J175 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
fabricante
J175
Vishay
Vishay Semiconductors Vishay
J175 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
J/SST174/175/176/177 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR J/SST174 AND J/SST175 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST174
J/SST175
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
rDS(on)
VGS(F)
IG = 1 mA , VDS = 0 V
VDS = –15 V, ID = –10 nA
VDS = –15 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
TA = 125_C
VDG = –15 V, ID = –1 mA
VDS = –15 V, VGS = 10 V
TA = 125_C
VGS = 0 V, VDS = –0.1 V
IG = –1 mA , VDS = 0 V
45
30
30
V
5
10
3
6
–20 –135 –7
–70
mA
0.01
1
1
5
0.01
–0.01
–1
nA
–1
–5
85
125
W
–0.7
V
Common-Source
Forward Transconductance
gfs
4.5
VDS = –15 V, ID = –1 mA
mS
Common-Source
Output Conductance
f = 1 kHz
gos
20
mS
Drain-Source On-Resistance
rds(on)
VGS = 0 V, ID = 0 mA , f = 1 kHz
85
125
W
Common-Source Input Capacitance
Ciss
VDS = 0 V, VGS = 0 V, f = 1 MHz
20
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 0 V, VGS = 10 V
f = 1 MHz
5
pF
Equivalent Input Noise Voltage
en
VDG = –10 V, ID = –1 mA
f = 1 kHz
20
nV
Hz
Switching
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
10
VGS(L) = 0 V, VGS(H) = 10 V
15
See Switching Circuit
10
20
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
ns
PSCIA
www.vishay.com
9-2
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
 

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