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J175 Ver la hoja de datos (PDF) - Linear Technology

Número de pieza
componentes Descripción
fabricante
J175
Linear
Linear Technology Linear
J175 Datasheet PDF : 2 Pages
1 2
J/SST174 SERIES
Linear Integrated Systems
SINGLE P-CHANNEL
JFET SWITCH
FEATURES
Direct Replacement For SILICONIX J/SST174 SERIES
LOW ON RESISTANCE
LOW GATE OPERATING CURRENT
ABSOLUTE MAXIMUM RATINGS1
rDS(on) 85
ID(off) = 10pA
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150°C
Junction Operating Temperature
-55 to 135°C
Maximum Power Dissipation
Continuous Power Dissipation
350mW
Maximum Currents
Gate Current
Maximum Voltages
IG = -50mA
Gate to Drain Voltage
Gate to Source Voltage
VGDS = 30V
VGSS = 30V
J SERIES
TO-92
BOTTOM VIEW
DGS
123
SST SERIES
SOT-23
TOP VIEW
D1
S2
3G
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BVGSS
VGS(F)
IGSS
IG
ID(off)
Gate to Source Breakdown Voltage
Gate to Source Forward Voltage
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
30
V
-0.7
0.01 1
0.01
nA
-0.01 -1
CONDITIONS
IG = 1µA, VDS = 0V
IG = -1mA, VDS = 0V
VGS = 20V, VDS = 0V
VDG = -15V, ID = -1mA
VDS = -15V, VGS = 10V
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
J/SST174 J/SST175 J/SST176 J/SST177
UNITS
MIN MAX MIN MAX MIN MAX MIN MAX
VGS(off)
Gate to Source
Cutoff Voltage
5 10 3
6
1
4 0.8 2.25 V
IDSS
Drain to Source
Saturation Current
-20 -135 -7 -70 -2 -35 -1.5 -20 mA
rDS(on)
Drain to Source
On Resistance
85
125
250
300
CONDITIONS
VDS = -15V, ID = -10nA
VDS = -15V, VGS = 0V
VGS = 0V, VDS = -0.1V
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
 

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