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ISL21009CMB850EP View Datasheet(PDF) - Intersil

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ISL21009CMB850EP Datasheet PDF : 14 Pages
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ISL21009MEP
Typical Performance Curves (ISL21009-50EP) (REXT = 100kΩ) (Continued)
GAIN IS x1000
NOISE IS 4.5µVP-P
50µA
-50µA
FIGURE 41. VOUT NOISE, 0.1Hz TO 10Hz
FIGURE 42. LOAD TRANSIENT RESPONSE
7mA
-7mA
FIGURE 43. LOAD TRANSIENT RESPONSE
Applications Information
FGA Technology
The ISL21009MEP voltage reference uses floating gate
technology to create references with very low drift and supply
current. Essentially the charge stored on a floating gate cell is
set precisely in manufacturing. The reference voltage output
itself is a buffered version of the floating gate voltage. The
resulting reference device has excellent characteristics, which
are unique in the industry: very low temperature drift, high
initial accuracy, and almost zero supply current. Also, the
reference voltage itself is not limited by voltage bandgaps or
zener settings, so a wide range of reference voltages can be
programmed (standard voltage settings are provided, but
customer-specific voltages are available).
The process used for these reference devices is a floating
gate CMOS process and the amplifier circuitry uses CMOS
transistors for amplifier and output transistor circuitry. While
providing excellent accuracy, there are limitations in output
noise level and load regulation due to the MOS device
characteristics. These limitations are addressed with circuit
techniques discussed in other sections.
Micropower Operation
The ISL21009MEP consumes extremely low supply current
due to the proprietary FGA technology. Low noise
performance is achieved using optimized biasing
techniques. Supply current is typically 95µA and noise is
4.5µVP-P benefitting precision, low noise portable
applications such as handheld meters and instruments.
Data Converters in particular can utilize the ISL21009MEP
as an external voltage reference. Low power DAC and ADC
circuits will realize maximum resolution with lowest noise.
10
FN6744.0
December 15, 2008
 

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