IRLR014NPBF View Datasheet(PDF) - International Rectifier
Part Name
Description
View to exact match
IRLR014NPBF Datasheet PDF : 10 Pages
| |||
PD - 95551B
l Logic-Level Gate Drive
l Surface Mount (IRLR024N)
l Straight Lead (IRLU024N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve the lowest
possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
IRLR014NPbF
IRLU014NPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.14Ω
S
ID = 10A
D-Pak
I-Pak
IRLR014NPbF IRLU014NPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
10
7.1
40
28
0.2
± 16
35
6.0
2.8
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
RθJC
Junction-to-Case
–––
RθJA
Case-to-Ambient (PCB mount)**
–––
RθJA
Junction-to-Ambient
–––
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
5.3
50
110
Units
°C/W
1
10/01/10
|
|
Share Link: 