IRL3713LPBF View Datasheet(PDF) - International Rectifier
Part Name
Description
View to exact match
IRL3713LPBF Datasheet PDF : 11 Pages
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SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l 100% RG Tested
l Lead-Free
VDSS
30V
PD - 97011B
IRL3713PbF
IRL3713SPbF
IRL3713LPbF
HEXFET® Power MOSFET
RDS(on) max (mW) ID
3.0@VGS = 10V
260A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3713PbF
D2Pak
TO-262
IRL3713SPbF IRL3713LPbF
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @Tc = 100°C
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ, TSTG
Linear Derating Factor
Junction and Storage Temperature Range
Max
30
± 20
h 260
h 180
h 1040
330
170
2.2
-55 to +175
Units
V
V
A
W
W/°C
°C
Thermal Resistance
Symbol
RθJC
RqCS
RθJA
RθJA
iParameter
Junction-to-Case
f Case-to-Sink, Flat, Greased Surface
fi Junction-to-Ambient
gi Junction-to-Ambient (PCB Mount)
Typ
–––
0.50
–––
–––
Max
0.45*
–––
62
40
Units
°C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes through are on page 11
www.irf.com
1
07/22/05
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