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IRFP90N20D View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP90N20D SMPS MOSFET IR
International Rectifier IR
IRFP90N20D Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP90N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200
–––
–––
3.0
–––
–––
–––
–––
––– ––– V
0.24 ––– V/°C
––– 0.023
––– 5.0 V
––– 25 µA
––– 250
––– 100
nA
––– -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 56A „
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
39 ––– –––
Qg
Total Gate Charge
––– 180 270
Qgs
Gate-to-Source Charge
––– 45 67
Qgd
Gate-to-Drain ("Miller") Charge
––– 87 130
td(on)
Turn-On Delay Time
––– 23 –––
tr
Rise Time
––– 160 –––
td(off)
Turn-Off Delay Time
––– 43 –––
tf
Fall Time
––– 79 –––
Ciss
Input Capacitance
––– 6040 –––
Coss
Output Capacitance
––– 1070 –––
Crss
Reverse Transfer Capacitance
––– 170 –––
Coss
Output Capacitance
––– 8350 –––
Coss
Output Capacitance
––– 420 –––
Coss eff. Effective Output Capacitance
––– 870 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 56A
ID = 56A
VDS = 160V
VGS = 10V, „
VDD = 100V
ID = 56A
RG = 1.2
VGS = 10V „
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V …
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy‚
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
1010
56
58
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 94o A showing the
––– ––– 380
integral reverse
G
p-n junction diode.
S
––– ––– 1.5 V TJ = 25°C, IS = 56A, VGS = 0V „
––– 230 340 ns TJ = 25°C, IF = 56A
––– 1.9 2.8 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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