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IRFP4668PBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP4668PBF HEXFET® Power MOSFET IR
International Rectifier IR
IRFP4668PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP4668PbF
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
-
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
-
D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
IInndduuccttoorr CCuurrerennt t
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
* VGS=10V
VDD
ISD
V(BR)DSS
15V
tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
VGS
RG
D.U.T.
+
-
VDD
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 23a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2μF
.3μF
D.U.T.
+
-VDS
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
www.irf.com
IAS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 24b. Gate Charge Waveform
7
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