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IRFP4668PBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP4668PBF HEXFET® Power MOSFET IR
International Rectifier IR
IRFP4668PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
1000
100
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
60μs PULSE WIDTH
Tj = 25°C
0.1
0.01
0.1
4.5V
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
1
0.1
3.0
TJ = 25°C
VDS = 50V
60μs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
16000
12000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
8000
4000
Coss
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
1000
100
IRFP4668PbF
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1
0.1
4.5V
60μs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
3.5
ID = 81A
3.0 VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
16
ID= 81A
12
VDS= 160V
VDS= 100V
VDS= 40V
8
4
0
0
40
80
120 160 200
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
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