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IRFP32N50KPbF View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
IRFP32N50KPbF Power MOSFET Vishay
Vishay Semiconductors Vishay
IRFP32N50KPbF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
IRFP32N50K, SiHFP32N50K
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width 1 µs
Duty factor 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01 0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
VDS
L
Driver
RG
20 V
tp
D.U.T
IAS
0.01 Ω
+
- VDAD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91221
S-81361-Rev. B, 07-Jul-08
VDS
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
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5
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