IRFP32N50KPbF View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
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IRFP32N50KPbF Datasheet PDF : 8 Pages
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IRFP32N50K, SiHFP32N50K
Vishay Siliconix
1000000
10000
VGS = 0 V,
Ciss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
f = 1 MHz
SHORTED
Ciss
1000
100
Coss
10
1
Crss
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 32 A
16
VDS = 400 V
VDS = 250 V
VDS = 100 V
12
8
4
0
0
40
80
120
160
200
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
TJ = 150 °C
10
TJ = 25 °C
1
0.1
0.2
0.6
VGS = 0 V
0.9
1.3
1.6
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
OPERATING IN THIS AREA LIMITED
BY RDS(on)
100
10 μs
100 μs
10
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10
100
1 ms
10 ms
1000
VDS, Drain-to-Source Voltage (V)
10000
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91221
S-81361-Rev. B, 07-Jul-08
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