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IRFP27N60KPBF View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
IRFP27N60KPBF Power MOSFET Vishay
Vishay Semiconductors Vishay
IRFP27N60KPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
12
ID = 28A
10
VDS = 480V
VDS = 300V
VDS = 120V
7
5
2
0
0
30
60
90
120
150
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
10
T J= 150 ° C
1
T J= 25 ° C
V GS= 0 V
0.1
0.2
0.5
0.8
1.1
1.4
V SD,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10
100
10msec
1000
10000
VDS , Drain-toSource Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91219
S-Pending-Rev. B, 12-Jun-08
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