IRFP27N60KPBF View Datasheet(PDF) - Vishay Semiconductors
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Description
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IRFP27N60K, SiHFP27N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.29
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(on)
gfs
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 16 Ab
VDS = 50 V, ID = 16 A
600
-
-
V
-
640
- mV/°C
3.0
-
5.0
V
-
-
± 100 nA
-
-
50
µA
-
-
250
-
0.18 0.22
Ω
14
-
-
S
VGS = 0 V
-
VDS = 25 V
-
f = 1.0 MHz, see fig. 5
-
VGS = 0 V VDS = 1.0 V , f = 1.0 MHz -
VGS = 0 V VDS = 480 V , f = 1.0 MHz -
VGS = 0 V
VDS = 0 V to 480 V
-
-
ID = 27 A, VDS = 480 V
VGS = 10 V
see fig. 6 and 13b
-
-
-
VDD = 300 V, ID = 27 A
-
RG = 4.3 Ω, VGS = 10 V, see fig. 10b
-
-
4660
-
460
-
41
-
pF
5490
-
120
-
250
-
-
180
-
56
nC
-
86
27
-
110
-
ns
43
-
38
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
ISM
integral reverse
p - n junction diode
D
G
S
-
-
27
A
-
-
110
Body Diode Voltage
VSD
TJ = 25 °C, IS = 27 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
trr
-
620
920
ns
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IF = 27 A, dI/dt = 100 A/µsb
-
11
16
µC
Reverse Recovery Current
IRRM
-
36
53
A
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDS.
www.vishay.com
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Document Number: 91219
S-Pending-Rev. B, 12-Jun-08
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