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IRFIZ24G View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFIZ24G
Vishay
Vishay Semiconductors Vishay
IRFIZ24G Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFIZ24G, SiHFIZ24G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
4.1
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 8.4 Ab
VDS = 25 V, ID = 8.4 Ab
60
-
-
V
-
0.061
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.10
Ω
5.8
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Ciss
Coss
Crss
C
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
f = 1.0 MHz
-
640
-
-
360
-
pF
-
79
-
-
12
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
VGS = 10 V
ID = 17 A, VDS = 48 V,
see fig. 6 and 13b
-
-
-
25
-
5.8
nC
-
11
VDD = 30 V, ID = 17 A,
RG = 18 Ω, RD= 1.7 Ω,
see fig. 10b
-
13
-
-
58
-
ns
-
25
-
-
42
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
14
A
-
-
56
Body Diode Voltage
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb
90
180
ns
Qrr
-
0.32 0.64 µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91187
S09-0063-Rev. A, 02-Feb-09
 

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