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IRFIZ24GPBF View Datasheet(PDF) - Kersemi Electronic Co., Ltd.

Part Name
Description
View to exact match
IRFIZ24GPBF
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
IRFIZ24GPBF Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRFIZ24G, SiHFIZ24G
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
-
+
RG
dV/dt controlled by RG
+
Driver same type as D.U.T.
ISD controlled by duty factor "D"
- VDD
D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
Body diode forward
current
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig.14 - For N-Channel
www.kersemi.com
7
 

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