datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

IRFI9640GPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFI9640GPBF
Vishay
Vishay Semiconductors Vishay
IRFI9640GPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFI9640G, SiHFI9640G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 200
VGS = - 10 V
44
7.1
27
Single
0.50
S
TO-220 FULLPAK
G
GDS
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• P-Channel
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
TO-220 FULLPAK
IRFI9640GPbF
SiHFI9640G-E3
IRFI9640G
SiHFI9640G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at - 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 26 mH, RG = 25 Ω, IAS = - 6.1 A (see fig. 12).
c. ISD - 11 A, dI/dt 150 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91169
S-Pending-Rev. A, 16-Jun-08
WORK-IN-PROGRESS
LIMIT
- 200
± 20
- 6.1
- 3.9
- 24
0.32
650
- 6.1
4.0
40
- 5.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]