IRFD120 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

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IRFD120

1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

Fairchild Semiconductor 

IRFD120

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

Continuous Source to Drain Current

Pulse Source to Drain Current

I SD

ISDM

Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction

D

Diode

G

S

Source to Drain Diode Voltage (Note 2)

Reverse Recovery Time

Reverse Recovery Charge

V SD

trr

Q RR

TJ = 25oC, ISD = 1.3A, VGS = 0V (Figure 12)

TJ = 150oC, ISD = 1.3A, dISD/dt = 100A/µs

TJ = 150oC, ISD = 1.3A, dISD/dt = 100A/µs

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. VDD = 25V, starting TJ = 25oC, L = 32mH, RG = 25Ω, peak IAS = 1.3A.

MIN TYP MAX UNITS

-

-

1.3

A

-

-

5.2

A

-

-

2.5

V

-

280

-

ns

-

1.6

-

µC

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

0

0

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

1.5

1.2

0.9

0.6

0.3

0

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

10

1

0.1 OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

100µs

1ms

10ms

100ms

0.01

TJ = MAX RATED

0.1

1

10

VDS, DRAIN TO SOURCE VOLTAGE (V)

DC

100

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

20

VGS = 10V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

16

VGS = 9V

VGS = 8V

12

VGS = 7V

8

VGS = 6V

4

VGS = 5V

VGS = 4V

0

0

10

20

30

40

50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. OUTPUT CHARACTERISTICS

©2002 Fairchild Semiconductor Corporation

IRFD120 Rev. B

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