IRFBC20PBF(2008) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
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IRFBC20PBF Datasheet PDF : 8 Pages
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IRFBC20, SiHFBC20
Vishay Siliconix
THERMAL RESISTANCE
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
2.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.3 Ab
VDS = 50 V, ID = 1.3 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 2.0 A, VDS = 360 V
see fig. 6 and 13b
VDD = 300 V, ID = 2.0 A
RG = 18 Ω, RD= 150 Ω
see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
Drain-Source Body Diode Characteristics
MIN.
600
-
2.0
-
-
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.88
-
V/°C
-
4.0
V
-
± 100 nA
-
100
µA
-
500
-
4.4
Ω
-
-
S
350
-
48
-
pF
8.6
-
-
18
-
3.0 nC
-
8.9
10
-
23
-
ns
30
-
25
-
4.5
-
nH
7.5
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
2.2
A
-
-
8.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.2 A, VGS = 0 Vb
-
-
2.0
V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IF = 2.0 A,
dI/dt = 100 A/µsb
-
290 580 ns
-
0.67 1.3 µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91106
S-81243-Rev. A, 21-Jul-08
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