IRFB11N50APBF View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

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IRFB11N50APBF

Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)

Vishay Semiconductors 

IRFB11N50A, SiHFB11N50A

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

10

TJ = 150° C

TJ = 25° C

1

1

0.1

0.1

4.5V 20µs PULSE WIDTH

TJ= 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

20µs PULSE WIDTH

4.5V

TJ= 150 °C

1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

V DS= 50V

20µs PULSE WIDTH

0.1

4.0

5.0

6.0

7.0

8.0

9.0

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3.0 ID = 11A

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91094

S-81243-Rev. B, 21-Jul-08

www.vishay.com

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