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IRF9510 View Datasheet(PDF) - Intersil

Part NameDescriptionManufacturer
IRF9510 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET Intersil
Intersil Intersil
IRF9510 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRF9510
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
400 COSS CDS + CGD
300
CISS
200
100
00
COSS
CRSS
-10
-20
-30
-40
-50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.5
TJ = -55oC
2.0
TJ = 25oC
TJ = 125oC
1.5
1.0
0.5
0
0
VDS > ID(ON) x RDS(ON) MAX.
80µs PULSE TEST
-1.2
-2.4
-3.6
-4.8
-6.0
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-102
-10
TJ = 150oC
TJ = 25oC
-1
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
ID = -4A
-5
VDS = -20V
-10
VDS = -50V
VDS = -80V
-15
0
2
4
6
8
10
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-7
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