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IRF9510 View Datasheet(PDF) - Intersil

Part NameDescriptionManufacturer
IRF9510 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET Intersil
Intersil Intersil
IRF9510 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRF9510
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF9510
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain
TC = 100oC . .
Current
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. ID
. ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-100
-100
-3.0
-2.0
-12
±20
20
0.16
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
190
-55 to 150
mJ
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Gate to Source Leakage Current
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
BVDSS
VGS(TH)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = -250µA, (Figure 10)
VGS = VDS, ID = -250µA
VGS = ±20V
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V,
(Figure 7)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
rDS(ON)
gfs
VGS = -10V, ID = -1.5A, (Figures 8, 9)
VDS > ID(ON) x rDS(ON) Max, ID = -1.5A,
(Figure 12)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
tf
VDD = 0.5 x Rated BVDSS, ID -3.0A,
RG = 50, VGS = 10V, (Figures 17, 18)
RL = 15.7for VDSS = 50V
RL = 12.3for VDSS = 40V
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
VGS = -10V, ID = -3A, VDS = 0.8 x Rated BVDSS,
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
VGS = 0V, VDS = -25V, f = 1.0MHz,
(Figure 11)
Measured From the
Contact Screw on Tab
to Center of Die
Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
D
LD
Internal Source Inductance
LS
Measured From The
G
Source Lead, 6mm
LS
(0.25in) From Header to
Source Bonding Pad
S
Junction to Case
Junction to Ambient
RθJC
RθJA
Typical Socket Mount
MIN
-100
-2.0
-
-
-
-3.0
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
-
-
V
-
-4.0
V
-
±100 nA
-
-25
µA
-
-250 µA
-
-
A
1.000 1.200
1.1
-
S
15
30
ns
30
60
ns
20
40
ns
20
40
ns
8.5
11
nC
3.8
-
nC
4.7
-
nC
180
-
pF
85
-
pF
30
-
pF
3.5
-
nH
4.5
-
nH
7.5
-
nH
-
6.4 oC/W
-
62.5 oC/W
5-4
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