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SIHF9510 View Datasheet(PDF) - Vishay Semiconductors

Part NameSIHF9510 Vishay
Vishay Semiconductors Vishay
DescriptionPower MOSFET
SIHF9510 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRF9510, SiHF9510
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
- 10 V
Pulse width 1 µs
Duty factor 0.1 %
-
+VDD
Fig. 10a - Switching Time Test Circuit
VGS
10 %
td(on) tr
td(off) tf
90 %
VDS
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
- 10 V
tp
L
D.U.T
IAS
0.01 Ω
-
+
V
DD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91072
S-Pending-Rev. A, 20-Jun-08
IAS
VDS
VDD
tp
VDS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
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DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

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