IRF630 View Datasheet(PDF) - Philips Electronics

Part Name

Description

View to exact match

IRF630

N-channel TrenchMOS transistor

Philips Electronics 

Philips Semiconductors

N-channel TrenchMOS™ transistor

Product specification

IRF630, IRF630S

Source-Drain Diode Current, IF (A)

10

VGS = 0 V

9

8

7

6

175 C

5

Tj = 25 C

4

3

2

1

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Source-Drain Voltage, VSDS (V)

1.1 1.2

Fig.13. Typical reverse diode current.

IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

Maximum Avalanche Current, IAS (A)

10

1

Tj prior to avalanche = 150 C

25 C

0.1

0.001

0.01

0.1

1

10

Avalanche time, tAV (ms)

Fig.14. Maximum permissible non-repetitive

avalanche current (IAS) versus avalanche time (tAV);

unclamped inductive load

August 1999

6

Rev 1.100

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