datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

IRF630S View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
IRF630S
Philips
Philips Electronics Philips
IRF630S Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
IRF630, IRF630S
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
(body diode)
ISM
Pulsed source current (body
diode)
VSD
Diode forward voltage
IF = 9 A; VGS = 0 V
trr
Reverse recovery time
IF = 9 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge VGS = -10 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
-
9
A
-
- 36 A
- 0.85 1.2 V
- 92 - ns
- 0.5 - µC
August 1999
3
Rev 1.100
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]