RF1S630SM9A View Datasheet(PDF) - Intersil
Part Name
Description
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RF1S630SM9A Datasheet PDF : 7 Pages
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IRF630, RF1S630SM
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse
D
P-N Junction Diode
G
MIN
TYP
MAX UNITS
-
-
9
A
-
-
36
A
S
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25oC, ISD = 9A, VGS = 0V (Figure 13)
-
-
2
V
Reverse Recovery Time
trr
TJ = 150oC, ISD = 9A, dISD/dt = 100A/µs
-
450
-
ns
Reverse Recovery Charge
QRR
TJ = 150oC, ISD = 9A, dISD/dt = 100A/µs
-
3
-
µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 20V, starting TJ = 25oC, L = 3.37mH, RG = 50Ω, peak IAS = 9A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC RθJC + TC
1
10
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
4-204
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