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IRF1010E View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRF1010E HEXFET®Power MOSFET IR
International Rectifier IR
IRF1010E Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRF1010E
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
0.1
20µs PULSE WIDTH
TJ = 175 °C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25° C
TJ = 175 ° C
V DS= 25V
20µs PULSE WIDTH
10
4
5
6
7
8
9
10 11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 84A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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