IR53H420 View Datasheet(PDF) - International Rectifier
Part Name
Description
View to exact match
IR53H420 Datasheet PDF : 8 Pages
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Preliminary Data Sheet No. PD60140J
IR53H(D)420(-P2)
SELF-OSCILLATING HALF BRIDGE
Features
• Output power MOSFETs in half-bridge configuration
• High side gate drive designed for bootstrap operation
• Bootstrap diode integrated into package (HD type)
• Tighter initial deadtime control
• Low temperature coefficient deadtime
• 15.6V zener clamped Vcc for offline operation
• Half-bridge output is out of phase with RT
• True micropower startup
• Shutdown feature (1/6th VCC) on CT lead
• Increased undervoltage lockout hysteresis (1Volt)
• Lower power level-shifting circuit
• Lower di/dt gate drive for better noise immunity
• Excellent latch immunity on all inputs and outputs
• ESD protection on all leads
• Constant VO pulse width at startup
• Heatsink package version (P2 type)
Product Summary
VIN (max)
500V
Duty Cycle
Deadtime (type.)
50%
1.2µs
Rds(on)
3.0Ω
PD (TA = 25oC) 2.0W or 3.0W
Package
Description
The IR53H(D)420(-P2) are complete high voltage, high speed,
self-oscillating half-bridge circuits. Proprietary HVIC and latch
immune CMOS technologies, along with the HEXFET® power
MOSFET technology, enable ruggedized single package con-
struction. The front-end features a programmable oscillator
which functions similar to the CMOS 555 timer. The supply to
the control circuit has a zener clamp to simplify offline opera-
tion. The output features two HEXFETs in a half-bridge con-
figuration with an internally set deadtime designed for mini-
mum cross-conduction in the half-bridge. Propagation delays
Typical Connection
HV DC Bus
VIN
IR53H(D)420(-P2)
D1
COM
1 Vcc
VB
6
2
RT
9
VIN
RT
3 CT
VO 7
CT
4 COM
7 Pin Lead SIP
for the high and low side power MOSFETs
are matched to simplify use in 50% duty
cycle applications. The device can oper-
ate up to the VIN (max) rating.
External
Fast recovery diode D1 is not
required for HD type
TO,
LOAD
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