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HY27UF084G2B View Datasheet(PDF) - Hynix Semiconductor

Part Name
Description
View to exact match
HY27UF084G2B
Hynix
Hynix Semiconductor Hynix
HY27UF084G2B Datasheet PDF : 51 Pages
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1
HY27UF(08/16)4G2B Series
4Gbit (512Mx8bit) NAND Flash
Parameter
Symbol
3.3V
Min
Max
CLE Setup time
tCLS
12
CLE Hold time
tCLH
5
CE setup time
tCS
20
CE hold time
tCH
5
WE pulse width
tWP
12
ALE setup time
tALS
12
ALE hold time
tALH
5
Data setup time
tDS
12
Data hold time
tDH
5
Write Cycle time
tWC
25
WE High hold time
tWH
10
Data Transfer from Cell to register
tR
25
ALE to RE Delay
tAR
10
CLE to RE Delay
tCLR
10
Ready to RE Low
tRR
20
RE Pulse Width
tRP
12
WE High to Busy
tWB
100
Read Cycle Time
tRC
25
RE Access Time
tREA
20
RE High to Output High Z
tRHZ
100
CE High to Output High Z
tCHZ
50
CE High to Output hold
tCOH
15
RE High to Output Hold
tRHOH
15
RE Low to Output Hold
tRLOH
5
RE High Hold Time
tREH
10
Output High Z to RE low
tIR
0
CE Low to RE Low
tCR
10
Address to data loading time
tADL
70
WE High to RE low
tWHR
80
RE High to WE low
tRHW
100
Device Resetting Time (Read / Program / Erase)
tRST
5/10/500(1)
Write Protection time
tWW(2)
100
Table 13: AC Timing Characteristics
NOTE:
1. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us
2. Program / Erase Enable Operation : WP high to WE High.
Program / Erase Disable Operation : WP Low to WE High.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
Rev 0.4 / Jan. 2008
21
 

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